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PL

Detection principle

· Photoluminescence (PL for short), the defects of solar cells often limit their photoelectric conversion efficiency and service life

· Photoluminescence can quickly detect silicon wafers through the change of minority carrier lifetime. The principle is to use the principle of photoluminescence to obtain fluorescent photos of crystalline silicon, and it has high resolution to detect the rough surface and internal damage of silicon wafers.

· Compared with the EL test, which needs to touch the sample, the PL test does not touch the sample, so it can monitor the production process of the production cell



ProjectSpecification
Equipment size

Length 450mm Width 450mm Height 770mm

Applicable maximum size175*175mm
Applicable Wafer Type

Single crystal, polycrystalline

Maximum capacity

>3600PCS/hour

Pixel Accuracy

<0.34mm (0.5K line scan camera)

Detection accuracy<0.34mm

UPTime

>98%




ProjectSpecification

Black heart, black edge, black

Single crystal, polycrystalline

CrackSingle crystal, polycrystalline
Scratches

Single crystal, polycrystalline

Pollute

Single crystal, polycrystalline

Broken grid

Single crystal, polycrystalline

Uneven sintering

Single crystal, polycrystalline
Dislocation

Polycrystalline

DamagedSingle crystal, polycrystalline



Imaging effect

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